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Indium versus hydrogen-terminated GaN(0001) surfaces: Surfactant effect of indium in a chemical vapor deposition environment

Identifieur interne : 00A451 ( Main/Repository ); précédent : 00A450; suivant : 00A452

Indium versus hydrogen-terminated GaN(0001) surfaces: Surfactant effect of indium in a chemical vapor deposition environment

Auteurs : RBID : Pascal:04-0229943

Descripteurs français

Pascal (Inist)
- 8105E, 8115G, 7115M, 7320A, 6847F, 6835B, 6855J, 8270U, Etude théorique, Gallium composé, Semiconducteur III-V, Semiconducteur bande interdite large, Couche mince semiconductrice, Croissance semiconducteur, Méthode MOCVD, Indium, Agent surface, Calcul ab initio, Méthode pseudopotentiel, Méthode fonctionnelle densité, Energie totale, Structure surface.

English descriptors

KwdEn :
- Ab initio calculations, Density functional method, Gallium compounds, III-V semiconductors, Indium, MOCVD, Pseudopotential methods, Semiconductor growth, Semiconductor thin films, Surface structure, Surfactants, Theoretical study, Total energy, Wide band gap semiconductors.

Abstract

First-principles pseudopotential density functional calculations of the relative stability of H- and In-terminated GaN(0001) surfaces are reported. These total energy calculations show that surfaces terminated by one or two monolayers of In are more stable under typical metalorganic vapor deposition conditions than the H-terminated surface structures that have been proposed. Indium may act as a surfactant to improve the growth morphology of GaN films grown by metalorganic vapor deposition via a mechanism similar to that operative in molecular beam epitaxy. © 2004 American Institute of Physics.

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Le document en format XML

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<front><div type="abstract" xml:lang="en">First-principles pseudopotential density functional calculations of the relative stability of H- and In-terminated GaN(0001) surfaces are reported. These total energy calculations show that surfaces terminated by one or two monolayers of In are more stable under typical metalorganic vapor deposition conditions than the H-terminated surface structures that have been proposed. Indium may act as a surfactant to improve the growth morphology of GaN films grown by metalorganic vapor deposition via a mechanism similar to that operative in molecular beam epitaxy. © 2004 American Institute of Physics.</div>
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Indium versus hydrogen-terminated GaN(0001) surfaces: Surfactant effect of indium in a chemical vapor deposition environment

Indium versus hydrogen-terminated GaN(0001) surfaces: Surfactant effect of indium in a chemical vapor deposition environment

Descripteurs français

English descriptors

Abstract

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Links to Exploration step

Le document en format XML

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